针对LED高光效、高显色指数的要求,在分析LED光学性能的基础上,采用板上芯片(COB,Chip on Board)技术研究了表面涂覆硅胶量对COB白光LED的光通量、光效、色温和显色指数的影响,并提出一种高光效、高显色指数、低色温的白光LED封装方案,提高了COB白光LED的出光效率,实现了特定的光学分布,最终实现14W COB封装结构下的白光LED,在电流密度为30A/cm2时,其色温、显色指数及光效分别为4900K、82和125lm/W。

荧光粉受激发产生的白光LED照明光源存在显色指数较低的问题。对此提出一种利用光谱拟合反演高显指目标光谱的方法,针对已知白光LED计算提高该光源所需补充的单色光LED种类及光谱系数。利用光谱拟合方法分析添加不同波段的光谱对白光LED显指和色温的影响。并通过拟合反演的方法进行补光设计,使用一到两种单色光LED,将冷白光源和中性白光源的显指分别提高至92.3和96.8。实验结果表明,使用红光与蓝绿光、低波长绿光LED补光后,大幅度提高了荧光粉受激发产生的白光LED光源的显色性。

Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes (LEDs). Emission spectra, carrier concentration, electron current density, and internal quantum e±ciency (IQE) are studied numerically. Simulation results show that the e±ciency droop and the spectrum intensity at the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when a specific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection e±ciency could be one of the main reasons for these improvements.

基于温室植物光学作用和光形态调节原理,设计了两种用于植物照明的发光二极管(LED)阵列。通过推导阵列的辐射照度叠加公式并根据叠加公式对阵列进行仿真优化。两种阵列均采用红蓝LED相结合的方式排列,其中阵列1红光和蓝光LED的数量比是1∶1,阵列2红光和蓝光LED的数量比是4∶1。通过光学模拟软件Tracepro对照射平面进行辐射照度均匀性分析,经过优化后的阵列2在照射平面上辐射照度均匀性优于阵列1,并且阵列2的LED间距较大,更有利于整个LED阵列的散热。该结果为LED植物照明灯的阵列设计提供参考。

综述了基于三大化合物半导体材料（GaAs基、InP基与GaN基）的量子级联探测器（QCD）的进展，对这三种材料体系的QCD的各种技术指标如光电流响应度、电阻、电流-电压特性等做了详细的说明，最后对其他半导体材料及新型结构的QCD做了展望。

The morphology of self-organized InP islands on GaInP buffer layers were probed by the whole island energy and surface energy. The island morphology was affected by Mismatch between GaxIn_(1-x)P buffer layer and InP island (MBI). With MBI increasing, the island elongates itself. The calculation also shows that the island metamorphosis was elongated with the increasing of the island volume. The morphology of different InP/GaxIn_(1-x)P systems, grown on GaAs substrate by metal organic chemical vapor deposition (MOCVD) method, was consistent with calculations. The self-organized islands at the surface of buffer layers were analyzed by scaling theories to show a periodical distribution. Buffer layers such as the mismatched GaInP on the GaAs (100) tilt to (111) 15 Celsius degree could improve the periodicity of the island separation distribution. The result also shows that the dislocations had different functions in island distribution along different directions, [110] and [1-10] directions.